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Current Research | UCLA Integrated Sensors Laboratory
Current Research | UCLA Integrated Sensors Laboratory

A fully monolithic 0.18 m SiGe BiCMOS power amplifier design
A fully monolithic 0.18 m SiGe BiCMOS power amplifier design

A Comparison of Si CMOS, SiGe BiCMOS, and InP HBT Technologies for High-Speed and Millimeter-Wave ICs
A Comparison of Si CMOS, SiGe BiCMOS, and InP HBT Technologies for High-Speed and Millimeter-Wave ICs

PDF] Foundation of rf CMOS and SiGe BiCMOS technologies | Semantic Scholar
PDF] Foundation of rf CMOS and SiGe BiCMOS technologies | Semantic Scholar

A 24‐GHz active up/down bidirectional mixer in 130‐nm RF CMOS - Cao - 2022 - International Journal of RF and Microwave Computer-Aided Engineering - Wiley Online Library
A 24‐GHz active up/down bidirectional mixer in 130‐nm RF CMOS - Cao - 2022 - International Journal of RF and Microwave Computer-Aided Engineering - Wiley Online Library

Predictive modeling of device and circuit reliability in highly scaled CMOS and SiGe BiCMOS technology
Predictive modeling of device and circuit reliability in highly scaled CMOS and SiGe BiCMOS technology

PDF] Foundation of rf CMOS and SiGe BiCMOS technologies | Semantic Scholar
PDF] Foundation of rf CMOS and SiGe BiCMOS technologies | Semantic Scholar

In 0.35um SiGe BiCMOS Technology
In 0.35um SiGe BiCMOS Technology

SiGe BiCMOS - RFIC Solutions Inc
SiGe BiCMOS - RFIC Solutions Inc

BiCMOS vs CMOS Final
BiCMOS vs CMOS Final

PDF) A Low-Cost Fully Self-Aligned SiGe BiCMOS Technology Using Selective Epitaxy and a Lateral Quasi-Single-Poly Integration Concept | Armin Tilke - Academia.edu
PDF) A Low-Cost Fully Self-Aligned SiGe BiCMOS Technology Using Selective Epitaxy and a Lateral Quasi-Single-Poly Integration Concept | Armin Tilke - Academia.edu

Optically clocked switched-emitter-follower THA in a photonic SiGe BiCMOS technology
Optically clocked switched-emitter-follower THA in a photonic SiGe BiCMOS technology

Table 1 from Foundation of rf CMOS and SiGe BiCMOS technologies | Semantic Scholar
Table 1 from Foundation of rf CMOS and SiGe BiCMOS technologies | Semantic Scholar

Electronics | Free Full-Text | A 130-to-220-GHz Frequency Quadrupler with 80 dB Dynamic Range for 6G Communication in 0.13-μm SiGe Process
Electronics | Free Full-Text | A 130-to-220-GHz Frequency Quadrupler with 80 dB Dynamic Range for 6G Communication in 0.13-μm SiGe Process

Summary of SiGe BiCMOS and rf CMOS technology. | Download Scientific Diagram
Summary of SiGe BiCMOS and rf CMOS technology. | Download Scientific Diagram

PDF] Foundation of rf CMOS and SiGe BiCMOS technologies | Semantic Scholar
PDF] Foundation of rf CMOS and SiGe BiCMOS technologies | Semantic Scholar

Figure 1 from Foundation of rf CMOS and SiGe BiCMOS technologies | Semantic Scholar
Figure 1 from Foundation of rf CMOS and SiGe BiCMOS technologies | Semantic Scholar

Foundation of rf CMOS and SiGe BiCMOS technologies
Foundation of rf CMOS and SiGe BiCMOS technologies

10 Reasons Why QUBiC SiGe Is the Future of High-End RF | NXP Semiconductors
10 Reasons Why QUBiC SiGe Is the Future of High-End RF | NXP Semiconductors

Comparison of thin-oxide CMOS parameters for SiGe BiCMOS and rf CMOS... | Download Table
Comparison of thin-oxide CMOS parameters for SiGe BiCMOS and rf CMOS... | Download Table

PDF) Foundation of rf CMOS and SiGe BiCMOS technologies | S. Voldman, S. Onge, and B. Orner - Academia.edu
PDF) Foundation of rf CMOS and SiGe BiCMOS technologies | S. Voldman, S. Onge, and B. Orner - Academia.edu

Invited) SiGe BiCMOS for Optoelectronics
Invited) SiGe BiCMOS for Optoelectronics

PDF] Foundation of rf CMOS and SiGe BiCMOS technologies | Semantic Scholar
PDF] Foundation of rf CMOS and SiGe BiCMOS technologies | Semantic Scholar

An ultra-wide-band 3.1–10.6 GHz LNA design in 0.18 μm SiGe BiCMOS - ScienceDirect
An ultra-wide-band 3.1–10.6 GHz LNA design in 0.18 μm SiGe BiCMOS - ScienceDirect

X-FAB: News
X-FAB: News

Mayo SPPDG: About SPPDG
Mayo SPPDG: About SPPDG

A 24‐GHz active up/down bidirectional mixer in 130‐nm RF CMOS - Cao - 2022 - International Journal of RF and Microwave Computer-Aided Engineering - Wiley Online Library
A 24‐GHz active up/down bidirectional mixer in 130‐nm RF CMOS - Cao - 2022 - International Journal of RF and Microwave Computer-Aided Engineering - Wiley Online Library

Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems | Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering
Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems | Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering